Navitas 800 – Navitas Semiconductor used NVIDIA’s Partner Ceremony to spotlight a new 800 V-to-6 V DC-DC power delivery board for AI Factory MGX™—a design that removes a traditional 48 V intermediate bus converter stage and targets high efficiency, tighter rack integration,
When the AI Factory MGX™ ecosystem partners gathered for NVIDIA’s Partner Ceremony on May 29, 2026, at the Taipei Nangang Exhibition Center, Navitas walked in with a very specific promise: power delivery built to keep up with the next wave of gigawatt-scale AI data centers.
Navitas Semiconductor Corporation (Nasdaq: NVTS). a company focused on GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors. was honored to participate in the ceremony. The event brought together key ecosystem partners supporting the NVIDIA AI Factory MGX™ platform. framed around accelerating next-generation AI data centers powered by emerging 800 VDC rack architectures.
Just days before and after that ceremony, the hardware got its spotlight. Navitas’ 800 V-to-6 V DC-DC power delivery board (PDB) is being shown at NVIDIA’s AI Factory MGX™ Ecosystem Showcase at COMPUTEX 2026 in Taipei, running from June 2 through June 5.
The pitch is direct and operational. The PDB. powered by Navitas GaNFast technology. is designed to eliminate the need for a traditional 48 V intermediate bus converter (IBC) stage within the compute server trays. Navitas says removing that stage can maximize system efficiency, reliability, and “valuable real estate.”.
The board itself is built around performance targets that read like a checklist for modern rack power. Navitas says it features 16 GaNFast FETs rated at 650 V, with an 11 mOhms parameter, in the latest DFN8×8 dual-cooled package. The company is aiming for 97.5% peak efficiency, with a 1 MHz switching frequency, and a power density of 2100 W/in³.
Navitas also describes the board as physically compact—about 20% thinner than a mobile phone—enabling closer integration with the GPU board and improving transient performance while enhancing power distribution efficiency.
Chris Allexandre. President and CEO of Navitas. tied those design choices to the broader bottleneck AI builders are facing as workloads scale. “As AI workloads continue to scale and drive unprecedented demand for compute. power delivery has become one of the most critical challenges in enabling next-generation gigawatt AI factories. ” he said. “Through our collaboration with NVIDIA within the MGX™ ecosystem. Navitas is delivering GaN and SiC power technologies that enable megawatt-scale AI server racks with higher power density. a smaller system footprint. and improved thermal performance. helping accelerate the transition to more efficient and scalable AI infrastructure.”.
What Navitas put on display isn’t just a single board. The company positions the MGX™ push as part of a broader portfolio aimed at AI factory infrastructure. Navitas says its GeneSiC silicon carbide (SiC) solutions support efficient power delivery from the grid to the AI compute rack. including critical applications such as solid-state transformers (SSTs) built around ultra-high-voltage 2300 V and 3300 V SiC power modules. along with high-power three-phase power supply units (PSUs) powered by the latest Generation 5 technology 1200 V SiC MOSFETs.
The company also emphasizes why GaNFast is central to the rack-level approach. Navitas says its GaNFast technology delivers high-frequency. high-efficiency DC-DC power conversion needed to support rapidly growing power demands of AI GPUs. It says GaN’s switching performance enables MHz-frequency operation. higher power density. and faster transient response—allowing power delivery from the rack level directly to the GPU.
Taken together. the story follows the same path across the board and beyond it: high-frequency DC-DC conversion at the rack level. fewer conversion stages inside the compute server trays. and power components intended to support larger-scale AI infrastructure. That sequence is what ties the 800 VDC rack architecture focus to Navitas’ stated goals of better efficiency. greater power density. and improved system reliability at scale.
Navitas also said it continues collaborating closely with NVIDIA within the MGX™ ecosystem to enable open, modular AI infrastructure architectures and accelerate the industry’s transition to next-generation AI factories.
The press materials accompanying the announcement include two photos: one showing Navitas TW Country Manager Stacey Cho with an NV executive team, and another showing Navitas’ 800 V-to-6 V PDB board on the MGX Ecosystem display.
Beyond the showcase, the company rounded out its statement with what it calls its wider role in power electronics. Navitas describes itself as a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices. and high-voltage silicon carbide (SiC) technology—serving AI data centers. energy and grid infrastructure. performance computing. and industrial electrification. The company says it has more than 30 years of combined expertise in wide bandgap technologies. that GaNFast™ power ICs integrate GaN power. drive. control. sensing. and protection. and that GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology for voltage capability. efficiency. and reliability for medium-voltage grid and infrastructure applications.
Navitas adds that it has over 300 patents issued or pending and describes itself as the world’s first semiconductor company to be CarbonNeutral®-certified.
For readers looking to reach the company, Navitas Semiconductor lists contact information for Vipin Bothrain in connection with info@navitassemi.com, and provides investor contacts including Leanne Sievers and Brett Perry at Shelton Group, with sheltonir@sheltongroup.com.
Like many corporate announcements. the release includes a cautionary statement regarding forward-looking statements—warning that projections. expectations. and planned outcomes are not guarantees and could differ from actual future events. It points to risks discussed in Navitas’ Risk Factors section of its most recent annual report on Form 10-K. updated in its most recent quarterly report on Form 10-Q. and in other documents filed with the SEC.
Navitas NVIDIA MGX AI Factory MGX 800 VDC 800 V to 6 V DC-DC power delivery board GaNFast GeneSiC silicon carbide GaN power semiconductors COMPUTEX 2026 Taipei Nangang Exhibition Center AI data centers rack architectures 48 V intermediate bus converter